PART |
Description |
Maker |
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
MG600Q1US61 |
TOSHIBA IGBT Module Silicon N Channel IGBT GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
MIG100Q6CMB1X |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA Intelligent Power Module Silicon N Channel IGBT From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
APTGT20H60T3G |
Full - Bridge Trench Field Stop IGBT Power Module 32 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGT100DH60TG |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 150 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGT200DH60G |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 290 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGT100A120TG |
Phase leg Fast Trench Field Stop IGBT Power Module 140 A, 1200 V, N-CHANNEL IGBT
|
Advanced Power Technology, Ltd. MICROSEMI[Microsemi Corporation]
|
BSM50GB120DN2 |
IGBT Power Module 78 A, 1200 V, N-CHANNEL IGBT
|
eupec GmbH Infineon Technologies AG
|
MIG150J7CSB1W |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|